Mechanisms of epitaxy

Self-Assembly in Semiconductor Epitaxy: From Growth Mechanisms to Device Applications

A key feature of epitaxial semiconductor crystal growth is the possibility of realizing different surface morphological features when growing one material on another. This is driven by many factors, of which the relative lattice mismatch between the materials and the nature of the resultant strain is particularly crucial. Under appropriate conditions, elastic strain relaxation can lead to spont...

Magnetron Sputter Epitaxy of GaN

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

SiGe heterojunction bipolar transistors (HBTs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p SiGe base and n-Si emitter cap. DC electrical characteristics are compared with cross-section TEM images to identify the mechanisms and origins of leakage currents associated with the epitaxy in two different types o...

Germanium epitaxy on silicon

With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In...

Epitaxy of semiconductor-superconductor nanowires.

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epi...